RF power device having voltage controlled linearity

Details RF power device having voltage controlled linearity RF power device having voltage controlled linearity

1997-08-06

1999-04-27

Meler, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058981985

ABSTRACT:
A linear MOSFET device includes a shield plate positioned between a drain and an overlying gate. A voltage bias is applied to the shield plate to maintain linear operation of the device for RF power amplification. An AC ground is preferably connected to the shield plate. The voltage bias can be varied for matching of parallel connected devices, for responding to peak input signals, and for temperature compensation.

REFERENCES:
patent: 4511854 (1985-04-01), Kishida
patent: 5119149 (1992-06-01), Weitzel et al.
patent: 5243234 (1993-09-01), Lin et al.
patent: 5252848 (1993-10-01), Adler et al.
patent: 5446304 (1995-08-01), Sameshima et al.
patent: 5477068 (1995-12-01), Ozawa
patent: 5736757 (1998-04-01), Paul
Alan Wood, et al., "High Performance Silicon LDMOS Technology for 2GHz RF Power Amplifier Applications", 1996 IEEE, pp. ???.

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