RF power amplifier and method for packaging the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor

Reexamination Certificate

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Details

C257S259000, C257S664000, C257S778000, C361S793000, C361S795000

Reexamination Certificate

active

07935990

ABSTRACT:
A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals.

REFERENCES:
patent: 6362525 (2002-03-01), Rahim
patent: 6417737 (2002-07-01), Moloudi et al.

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