RF plasma reactor with hybrid conductor and multi-radius dome ce

Details RF plasma reactor with hybrid conductor and multi-radius dome ce RF plasma reactor with hybrid conductor and multi-radius dome ce

1996-02-02

1998-07-07

Paschall, Mark H.

Electric heating

Metal heating

By arc

21912152, 2191214, 156345, B23K 1000

Patent

active

057772894

ABSTRACT:
An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall and a ceiling, a wafer pedestal for supporting the wafer in the chamber, an RF power source, apparatus for introducing a processing gas into the reactor chamber, and a coil inductor adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section facing a portion of the side wall and including a bottom winding and a top winding, the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling. The present invention adheres to an optimized coil-dome geometry including a particular dome apex height range relative to the dome base and a particular wafer position range relative to the dome apex.

REFERENCES:
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5346578 (1994-09-01), Benzing et al.
patent: 5401350 (1995-03-01), Patrick et al.
patent: 5449432 (1995-09-01), Hanawa
U.S. Patent Application, Serial No. 08/113,776 entitled"High Density Plasma CVD and Etching Reactor" by Kevin Fairbairn et al. Issue fee paid Oct. 29, 1996, do not have patent number as yet.

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