Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed
Patent
1995-12-04
1998-10-06
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Electrical characteristic sensed
438 13, 438905, 438729, 438758, 134 11, 134 12, 216 61, 216 71, H05H 100
Patent
active
058175342
ABSTRACT:
The invention is carried out in a plasma reactor for processing a semiconductor wafer, the plasma reactor having a chamber for containing a processing gas and having a conductor connected to an RF power source for coupling RF power into the reactor chamber to generate from the processing gas a plasma inside the chamber, the chamber containing at least one surface exposed toward the plasma and susceptible to contamination by particles produced during processing of the wafer, the invention being carried out by promoting, during processing of the wafer, bombarding of particles from the plasma onto the one surface to remove therefrom contaminants deposited during processing of the wafer. Such promoting of bombarding is carried out by providing an RF power supply and coupling, during processing of the wafer, RF power from the supply to the one surface. The coupling may be performed by a capacitive cleaning electrode adjacent the one surface, the capacitive cleaning electrode connected to the RF power supply. The capacitive cleaning electrode preferably is disposed on a side of the one surface opposite the plasma so as to be protected from contact with the plasma. Alternatively, the coupling may be carried out by a direct electrical connection from the RF power supply to the one surface.
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Hanawa Hiroji
Loewenhardt Peter
Ma Diana Xiaobing
Mak Steven S.Y.
Olgado Donald
Applied Materials Inc.
Bowers Jr. Charles L.
Whipple Matthew
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