RF induction plasma source for plasma processing

Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

31511141, 31511151, 31511181, 31323131, H01J 724

Patent

active

054303559

ABSTRACT:
Plasma generator (10) includes chamber (14) for containing the plasma source and a plurality of coils (12) located inside of chamber (14). Located external to chamber (14) are a plurality of permanent multipolar magnets (34) operable to establish a magnetic field in the plasma source along the surface of chamber (14) and a set of electromagnets (36) located outside of chamber (14), which define a preferred propagation direction for a whistler wave in chamber (14). Coils (12) resonantly inductive couple RF power to the whistler wave so as to transfer a sufficient amount of energy to the plasma source to induce a plasma state in the plasma source. Coils (12) also generate time varying electromagnetic fields which also sustain the plasma state in the plasma source.

REFERENCES:
patent: 4948458 (1990-08-01), Ogle
patent: 5036252 (1991-07-01), Lob
patent: 5225740 (1993-07-01), Ohkawa
patent: 5231334 (1993-07-01), Paranjpe
patent: 5309063 (1994-05-01), Singh
R. W. Boswell, "Very efficient plasma generation by whistler waves near the lower hybrid frequency," Plasma Physics, vol. 26, pp. 1147, 1984.
R. W. Boswell and R. K. Porteous, "Large volume high density rf inductively coupled plasma", App. Phys. Lett., vol. 50, p. 1130, 1987.
R. W. Boswell, A. J. Perry and M. Emami, "Multipole confined diffusion plasma produced by 13.56 MHz electrodeless source", J. Vac. Sci. Technol., A, vol. 7, p. 3345, 1989.
F. F. Chen, "Experiments on helicon plasma sources", J. Vac. Sci. Technol. A, vol. 10, pp. 1389-1401, 1992.
J. M. Cook, D. E. Ibbotson, and D. L. Flamm, "Application of a low-pressure radio frequency discharge source to polysilicon gate etching", J. Vac. Sci. Technol. B, vol. 8, pp. 1-3, 1990.
T. Shirakawa, H. Toyoda, and H. Sugai, "RF plasma production at ultralow pressures with surface magnetic confinement", Jap. J. App. Phys., vol. 29, pp. L1015-L1018, 1990.
J. Hopwood, C. R. Guarnieri, S. J. Whitchair, and J. J. Cuomo, "Electromagnetic fields in a radio-frequency induction plasma", J. Vac. Sci. Technol., A, vol 11, pp. 147-151, 1993.
A. J. Perry, D. Vender, and R. W. Boswell, "The application of the helicon source to plasma processing", J. Vac. Sci. Technol., B, vol. 9, pp. 310-317, 1991.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

RF induction plasma source for plasma processing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with RF induction plasma source for plasma processing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF induction plasma source for plasma processing will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-762598

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.