Rewritable memory device based on segregation/re-absorption

Details Rewritable memory device based on segregation/re-absorption Rewritable memory device based on segregation/re-absorption

2009-06-22

2011-11-22

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

Reexamination Certificate

active

08064247

ABSTRACT:
Memory devices described herein are programmed and erased by physical segregation of an electrically insulating layer out of a memory material to establish a high resistance state, and by re-absorption of at least a portion of the electrically insulating layer into the memory material to establish a low resistance state. The physical mechanism of programming and erasing includes movement of structure vacancies to form voids, and/or segregation of doping material and bulk material, to create the electrically insulating layer consisting of voids and/or dielectric doping material along an inter-electrode current path between electrodes.

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