Rework process for photoresist film

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Finishing or perfecting composition or product

Reexamination Certificate

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C430S270100, C430S272100, C430S311000, C430S312000, C430S317000

Reexamination Certificate

active

07638268

ABSTRACT:
There is disclosed a rework process for a photoresist film over a substrate having at least a first antireflection silicone resin film and the photoresist film over the first silicone resin film comprising: at leastremoving the photoresist film with a solvent while leaving the first silicone resin film unremoved;forming a second antireflection silicone resin film over the first silicone resin film; andforming a photoresist film again over the second silicone resin film. There can be provided a rework process for a photoresist film that can be conducted more easily at lower cost and provide more certainly an excellent resist pattern.

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patent: 1 160 843 (2001-12-01), None
patent: WO 2004/027518 (2004-04-01), None
J. M. Moran et al., “High resolution, steep profile resist patterns.” J. Vac. Sci. Technolo., vol. 16, No. 1, pp. 1620-1624, 1979.

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