Rework method utilizing thinner for wafers in manufacturing of s

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

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430331, G03F 900

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active

061596469

ABSTRACT:
A thinner composition for removing photoresist, a rework method for wafers, and a method of manufacturing semiconductor devices are provided. The thinner composition is applied for removing excess photoresist coated on the edge side or back side of wafer. The thinner may be a mixture of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP), and .tau.-butyro lactone (GBL), or a mixture of ethyl lactate (EL), and ethyl-3-ethoxy propionate (EEP), or a mixture of ethyl lactate (EL), and ethyl-3-ethoxy propionate (EEP). The rework process is carried out, using the above thinner compositions, on the wafers having excess coated photoresist due to an etching failure. The method of manufacturing semiconductor devices includes a rinsing step for removing the excess coated photoresist on the edge side or back side of wafer by using the above thinner compositions.

REFERENCES:
patent: 5426017 (1995-06-01), Johnson
patent: 5543262 (1996-08-01), Rahman et al.
patent: 5866305 (1999-02-01), Chon et al.
Patent Abstracts of Japan, Pub. No. 06308734, Publication Date Apr. 1994.

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