Reversed T-shaped finfet

Details Reversed T-shaped finfet Reversed T-shaped finfet

2007-06-20

2009-06-02

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

C438S576000, C438S579000, C438S157000, C257SE21233

Reexamination Certificate

active

07541267

ABSTRACT:
A method includes forming a first rectangular mesa from a layer of semiconducting material and forming a first dielectric layer around the first mesa. The method further includes forming a first rectangular mask over a first portion of the first mesa leaving an exposed second portion of the first mesa and etching the exposed second portion of the first mesa to produce a reversed T-shaped fin from the first mesa.

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