Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2007-07-31
2007-07-31
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S192000, C257S302000, C257S308000, C257S066000, C257S067000, C257S618000
Reexamination Certificate
active
10761374
ABSTRACT:
A fin field effect transistor (FinFET) includes a reversed T-shaped fin. The FinFET further includes source and drain regions formed adjacent the reversed T-shaped fin. The FinFET further includes a dielectric layer formed adjacent surfaces of the fin and a gate formed adjacent the dielectric layer.
REFERENCES:
patent: 6475890 (2002-11-01), Yu
patent: 6787854 (2004-09-01), Yang et al.
patent: 6894337 (2005-05-01), Wang et al.
patent: 2004/0113171 (2004-06-01), Chiu et al.
Digh Hisamoto et al., “FinFET-A Self-Aligned Double-Gate MOSFET Scalable to 20 nm,” IEEE Transactions on Electron Devices, vol. 47, No. 12, Dec. 2000, pp. 2320-2325.
Yang-Kyu Choi et al., “Sub-20nm CMOS FinFET Technologies,” 2001 IEEE, IEDM, pp. 421-424.
Xuejue Huang et al., “Sub-50 nm P-Channel FinFET,” IEEE Transactions on Electron Devices, vol. 48, No. 5, May 2001, pp. 880-886.
Xuejue Huang et al., “Sub 50-nm FinFET: PMOS,” 1999 IEEE, IEDM, pp. 67-70.
Yang-Kyu Choi et al., “Nanoscale CMOS Spacer FinFET for the Terabit Era,” IEEE Electron Device Letters, vol. 23, No. 1, Jan. 2002, pp. 25-27.
Ahmed Shibly S.
Lin Ming-Ren
Wang Haihong
Yu Bin
Advanced Micro Devices , Inc.
Erdem Fazli
Harrity & Snyder LLP
Pert Evan
LandOfFree
Reversed T-shaped FinFET does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reversed T-shaped FinFET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reversed T-shaped FinFET will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3779805