Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-07-16
2000-08-29
Booth, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438300, H01L 2100, H01L 21336
Patent
active
061107670
ABSTRACT:
A new method for fabricating a reversed MOS structure in order to provide latchup immunity in the manufacture of integrated circuits is described. An active area is provided in a semiconductor substrate separated from other active areas by isolation regions. A dielectric layer is formed on the surface of the semiconductor substrate in the active area. A polysilicon layer is deposited overlying the dielectric layer and patterned. A mask is formed over a portion of the polysilicon layer in the active area. Ions are implanted into the polysilicon layer not covered by the mask to form implanted regions within the polysilicon layer and simultaneously form implanted regions within the substrate adjacent to the polysilicon layer wherein the implanted regions in the polysilicon layer form source and drain regions and wherein the polysilicon layer covered by the mask forms a channel region and wherein the implanted regions within the substrate diffuse together to form a gate electrode underlying the channel region.
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Ackerman Stephen B.
Booth Richard
Lindsay Jr. Walter L.
Pike Rosemary L.S.
Saile George O.
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