Reverse tone mask method for post-CMP elimination of copper...

Details Reverse tone mask method for post-CMP elimination of copper... Reverse tone mask method for post-CMP elimination of copper...

2006-10-24

2006-10-24

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S690000, C257SE21215

Reexamination Certificate

active

07125803

ABSTRACT:
A novel reverse-tone mask method which is capable of eliminating metal overburden humps in a metal layer electroplated onto a substrate, is disclosed. Typically, the method includes providing a masking layer on a metal layer such as copper previously electroplated onto a substrate; depositing a photoresist layer on the masking layer; patterning the photoresist layer according to the size and location of the largest metal overburden humps in the metal layer; exposing the overburden humps by etching the masking layer according to the patterned photoresist layer; stripping the photoresist layer from the masking layer; subjecting the metal overburden humps to a first CMP or reverse electroplating process; removing the masking layer from the metal layer; and subjecting the metal layer to a second CMP or reverse electroplating process.

REFERENCES:
patent: 2004/0248408 (2004-12-01), Lohokare et al.
patent: 2005/0106848 (2005-05-01), Bailey et al.

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