Reverse masking profile improvements in high aspect ratio etch

Details Reverse masking profile improvements in high aspect ratio etch Reverse masking profile improvements in high aspect ratio etch

2007-06-06

2009-06-30

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C430S313000, C430S314000, C430S317000

Reexamination Certificate

active

07553770

ABSTRACT:
A method of improving high aspect ratio etching by reverse masking to provide a more uniform mask height between the array and periphery is presented. A layer of amorphous carbon is deposited over a substrate. An inorganic hard mask is deposited on the amorphous carbon followed by a layer of photodefinable material which is deposited over the array portion of the substrate. The photodefinable material is removed along with the inorganic hard mask overlaying the periphery. A portion of the amorphous carbon layer is etched in the exposed periphery. The inorganic hard mask is removed and normal high aspect ratio etching continues. The amount of amorphous carbon layer remaining in the periphery results in a more uniform mask height between the array and periphery at the end of high aspect ratio etching. The more uniform mask height mitigates twisting at the edge of the array.

REFERENCES:
patent: 5330617 (1994-07-01), Haond
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6852455 (2005-02-01), Lyons et al.
patent: 6924191 (2005-08-01), Liu et al.
patent: 6946385 (2005-09-01), Kanamura
patent: 7064078 (2006-06-01), Liu et al.
patent: 7079740 (2006-07-01), Vandroux et al.
patent: 7151040 (2006-12-01), Tran et al.
patent: 7220683 (2007-05-01), Yin et al.
patent: 7341957 (2008-03-01), Sandhu et al.
patent: 7407893 (2008-08-01), Seamons et al.
patent: 2001/0002331 (2001-05-01), Miyata
patent: 2002/0001778 (2002-01-01), Latchford et al.
patent: 2002/0086547 (2002-07-01), Mui et al.
patent: 2004/0061227 (2004-04-01), Gao et al.
patent: 2004/0079726 (2004-04-01), Tabery et al.
patent: 2005/0186802 (2005-08-01), Busch et al.
patent: 2005/0245075 (2005-11-01), Arita et al.
patent: 2005/0255702 (2005-11-01), Honeycutt et al.
patent: 2006/0231524 (2006-10-01), Liu et al.
patent: 2007/0111467 (2007-05-01), Kim
patent: 2007/0148984 (2007-06-01), Abatchev et al.
patent: 25 35 156 (1977-02-01), None
patent: 0 487 380 (1992-05-01), None
patent: 0 928 019 (1999-07-01), None
patent: 02/059951 (2002-08-01), None
International Search Report and Written Opinion for International application No. PCT/US2008/064295 dated Jul. 14, 2008.
Stanley Wolf, Ph.D., 15.4 Introduction to Dual-Damascene Interconnect Processes; Excerpt from: Silicon Processing For The VLSI ERA—vol. 4, p. 674-679.

Affiliated with

Also associated with

Rating

Reverse masking profile improvements in high aspect ratio etch does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reverse masking profile improvements in high aspect ratio etch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reverse masking profile improvements in high aspect ratio etch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4082940