Reverse-engineering resistant encapsulant for microelectric devi

Electricity: conductors and insulators – Boxes and housings – Hermetic sealed envelope type

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

174 524, 357 72, H01L 2328, H01L 2302

Patent

active

050307967

ABSTRACT:
A microelectronic device is rendered resistant to reverse engineering by encapsulating it in a dual layer encapsulant. The inner layer is compatible with the operation of the device, and has a greater resistance to chemical attack then does the device. The outer layer includes a filler of barium sulfate and gadolinium oxide, to absorb X-rays and N-rays respectively, is more resistant to chemical attack than the inner layer, and includes a groove around its periphery, to preferentially allow chemical attack radially. A full chemical attack damages the device beyond usable inspection, but a partial chemical attack is insufficient to remove X-ray and N-ray concealment.

REFERENCES:
patent: 3394218 (1968-07-01), Foudriat
patent: 3693252 (1972-09-01), Roberston et al.
patent: 3702464 (1972-11-01), Castrucci
patent: 3749601 (1971-04-01), Tittle
patent: 3778685 (1973-12-01), Kennedy
patent: 3828425 (1974-08-01), Manus
patent: 3889365 (1975-06-01), Brock
patent: 4001655 (1977-01-01), Voyles et al.
patent: 4101352 (1978-07-01), Poulin et al.
patent: 4250347 (1981-02-01), Fierkens
patent: 4264917 (1981-04-01), Ugon
patent: 4434361 (1984-02-01), Meinguss et al.
patent: 4788583 (1988-11-01), Kawahara et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Reverse-engineering resistant encapsulant for microelectric devi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reverse-engineering resistant encapsulant for microelectric devi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reverse-engineering resistant encapsulant for microelectric devi will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-619708

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.