Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1994-03-02
1997-03-04
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257540, 257546, H01L 2900
Patent
active
056082592
ABSTRACT:
An IC is constructed with deep layers preventing current flow due to parasitic transistors formed within the IC. Reverse current in case of voltage source polarity reversal is prevented by means of the reverse bias diodes formed by the addition of a P+ ring, and N+ well, for the embodiment disclosed.
REFERENCES:
patent: 3430110 (1969-02-01), Goshgarian
patent: 4085382 (1978-04-01), Barber et al.
patent: 4117507 (1978-09-01), Pacor
DeShazo Thomas R.
Giordano Raymond L.
Preslar Donald R.
Jr. Carl Whitehead
Rosenblatt Joel I.
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