Reverse conducting thyristor and process for producing the same

Details Reverse conducting thyristor and process for producing the same Reverse conducting thyristor and process for producing the same

1975-04-15

1977-02-22

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

357 38, H01L 2122

Patent

active

040090590

ABSTRACT:
A circular semiconductor wafer includes a thyristor surrounded by a diode through an annular V-shaped groove-filled with glass. That face of the wafer near to the extremity of the groove is disposed on a molybdenum plate through a brazing layer. A base layer on both faces of the wafer has those portions extending through the associated emitter region at predetermined positions to be exposed to the wafers face to form degenerate P-N junctions on and adjacent that face with the adjacent emitter portions. The brazing layer and the opposite electrode for the thyristor include small openings looking the exposed portions of the base layers and the adjacent emitter portions respectively.

REFERENCES:
patent: 3641403 (1972-02-01), Nakata
patent: 3699402 (1972-10-01), McCann et al.
patent: 3727116 (1973-04-01), Thomas et al.

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