Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-15
2008-07-15
Bui, Kieu-Oanh (Department: 2623)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S038000, C257S152000, C257S197000
Reexamination Certificate
active
07400017
ABSTRACT:
To provide a reverse conducting semiconductor device in which an insulated gate bipolar transistor and a free wheeling diode excellent in recovery characteristic are monolithically formed on a substrate, the free wheeling diode including; a second conductive type base layer to constitute the insulated gate bipolar transistor; a first conductive type base layer for constituting the insulated gate bipolar transistor, an anode electrode which is an emitter electrode covering a first conductive type emitter layer and the second conductive type base layer, a cathode electrode which is a collector electrode covering the first conductive type base layer and a second conductive type collector layer formed on the part of the first conductive type base layer, wherein a short lifetime region is formed on a part of the first conductive type base layer.
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Aono Shinji
Takahashi Hideki
Yamamoto, legal representative Ikuko
Yamamoto, legal representative Kenzo
Buchanan & Ingersoll & Rooney PC
Bui Kieu-Oanh
Mitsubishi Denki & Kabushiki Kaisha
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