Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-13
2007-11-13
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S329000, C257S340000
Reexamination Certificate
active
11096716
ABSTRACT:
The invention relates to a field effect controllable semiconductor component, comprising a semiconductor body with a first terminal zone and a second terminal zone, a channel zone formed between the two terminal zones, a control electrode, and also a plurality of compensation zones. The semiconductor component furthermore has additional doping zones which are arranged in spatial proximity to the compensation zones or in a manner merged therewith. The additional doping zones are connected to the first terminal zone, if appropriate via a series diode.
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Hu Shouxiang
Infineon - Technologies AG
Maginot Moore & Beck
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