Reverse-bias method for writing memory cells in a memory array

Details Reverse-bias method for writing memory cells in a memory array Reverse-bias method for writing memory cells in a memory array

2007-12-04

2007-12-04

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S096000, C365S106000, C365S163000

Reexamination Certificate

active

11174234

ABSTRACT:
A memory array having memory cells each comprising a diode and a phase change material or antifuse is reliably programmed by maintaining all word lines and bit lines connected to unselected memory cells at intermediate voltages and applying voltages to place the diode of a selected cell or cells in a reverse biased state and sufficient to program the phase change material or antifuse. Thus leakage through unselected cells is low so power wasted is small, and assurance is high that no unselected memory cells are disturbed.

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