Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2005-01-18
2005-01-18
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S462000, C438S612000, C438S653000, C438S656000, C438S720000, C438S945000
Reexamination Certificate
active
06844235
ABSTRACT:
According to one embodiment, verifying a reticle may include patterning an inspected layer (102-2) according to a reticle pattern, depositing a contrast enhancing layer (104-0) on a patterned layer (102-2), and inspecting a reticle patterned formed in the inspected layer (102-2).
REFERENCES:
patent: 5707883 (1998-01-01), Tabara
patent: 5854503 (1998-12-01), Hsueh et al.
patent: 5985693 (1999-11-01), Leedy
patent: 5998300 (1999-12-01), Tabara
patent: 6174820 (2001-01-01), Habermehl et al.
patent: 6294909 (2001-09-01), Leedy
patent: 6303447 (2001-10-01), Chhagan et al.
patent: 6303459 (2001-10-01), Chen
patent: 6420766 (2002-07-01), Brown et al.
Ben-Tzur Mira
Fung Allen
Jones Christopher M.
Cypress Semiconductor Corporation
Pham Long
Rao Shrinivas H.
Sako Bradley T.
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