Retardation layer for preventing diffusion of metal layer and fa

Details Retardation layer for preventing diffusion of metal layer and fa Retardation layer for preventing diffusion of metal layer and fa

1999-09-30

2000-12-05

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438638, 438643, 438647, 438653, 438657, 438666, 438672, H01L 2144

Patent

active

061566551

ABSTRACT:
A retardation layer of a copper damascene process and the fabrication method thereof, to replace the conventional barrier layer with a laminated layer. The laminated layer combines the conventional barrier layer with a porous layer, wherein the porous layer can be formed either above or below the barrier layer to improve the retardation of the copper atom diffusion. Preferably, the porous layer is formed above the barrier layer.

REFERENCES:
patent: 5893752 (1999-04-01), Zhang et al.
patent: 5904565 (1999-05-01), Nguyen et al.
patent: 5916823 (1999-06-01), Lou et al.
patent: 5939788 (1999-08-01), McTeer
patent: 5968333 (1999-10-01), Nogami et al.
patent: 5969422 (1999-10-01), Ting et al.
patent: 6017817 (2000-01-01), Chung et al.
patent: 6037664 (2000-03-01), Zhao et al.

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