Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1995-12-28
1997-08-12
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
365226, 365205, G11C 700
Patent
active
056572786
ABSTRACT:
A restore circuit for a semiconductor memory device with a sense amplifier and an internal supply voltage source, comprising a first PMOS transistor having its gate for inputting a first control signal from a first input line, its source and bias electrode connected in common to an external supply voltage source and its drain connected to an output line, the output line being connected to the sense amplifier, a second PMOS transistor having its gate for inputting a second control signal from a second input line, its source connected to the internal supply voltage source and its drain connected to the output line, and a feedback loop for feeding a voltage on the output line back to a bias electrode of the second PMOS transistor. According to the present invention, the restore circuit for the semiconductor memory device can generate a restore voltage which is stable with respect to a variation in an external supply voltage, with no increase in the number of manufacturing processes and no degradation in the drive capability.
REFERENCES:
patent: 5373477 (1994-12-01), Sugibayashi
Hoang Huan
Hyundai Electronics Industries Co,. Ltd.
Nelms David C.
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