Resputtering to achieve better step coverage of contact holes

Details Resputtering to achieve better step coverage of contact holes Resputtering to achieve better step coverage of contact holes

1996-10-07

1998-07-21

Raimund, Christopher

Stock material or miscellaneous articles

Structurally defined web or sheet

Including aperture

1566431, 1566441, 1566621, 20419211, 20419217, 20419232, 20419237, B32B 310, C23C 1400

Patent

active

057832820

ABSTRACT:
An improved apparatus and method for manufacturing semiconductor devices, and, in particular, for depositing material at the bottom of a contact hole, comprises sputtering a material onto a semiconductor substrate; applying a first bias voltage to the substrate, simultaneously removing the material surrounding the contact hole to form a facet at the top of the recess; and applying a second bias voltage to the substrate, simultaneously sputter-depositing the first material onto the bottom of the recess. A further embodiment of the invention utilizes an electrically isolated collimator for the sputtering apparatus. Another embodiment of the invention resputters a first material onto sidewalls of a contact hole during physical vapor deposition.

REFERENCES:
patent: 4717462 (1988-01-01), Homma et al.
patent: 4724060 (1988-02-01), Sakata et al.
patent: 4824544 (1989-04-01), Mikalesen et al.
patent: 4834856 (1989-05-01), Wehner
patent: 5114556 (1992-05-01), Lamont, Jr.
patent: 5302266 (1994-04-01), Grabarz et al.
patent: 5482611 (1996-01-01), Helmer et al.
patent: 5486492 (1996-01-01), Yamamoto et al.
patent: 5658438 (1997-08-01), Givens et al.
Andy Clarke, "Low-Angle Sidewell Planarization", Semiconductor International, vol. 18, No. 9, 1, (Aug., 1995).
Shin-ichi Ogawa, et al., "Dependence of Thermal Stability of the Titanium Silicide/Silicon Structure on Impurities", Applied Physics Letters, vol. 56, No. 8, 725-727, (Feb. 19, 1990).
G. K. Wehner, "The Aspects of Sputtering in Surface Analysis Methods", Methods of Surface Analysis, Elsevier Scientific, vol. .1, 5-37, (1975).

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