Resonant tunneling transistor

Details Resonant tunneling transistor Resonant tunneling transistor

1986-08-18

1989-07-18

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 16, 357 4, 357 30, 307474, H01L 29205, H01L 2972

Patent

active

048497991

ABSTRACT:
A resonant-tunneling, heterostructure bipolar transistor having a quantum well between emitter contact and collector region is described. In one embodiment, a compositionally graded portion of the emitter region is adjacent to the base region, and there is a double barrier in the base region. In another embodiment the quantum well is defined by the emitter and a potential barrier in the base region. Further embodiments have a quantum well between emitter and collector regions or else within the emitter region.

REFERENCES:
patent: 3855481 (1974-12-01), DeMone
patent: 4107721 (1978-08-01), Miller
patent: 4695857 (1987-09-01), Baba et al.
patent: 4712121 (1987-12-01), Yokoyama
Dubon et al. "Double Heterojunction . . . Circuits", IEDM Wash. D.C. 1983, pp. 689-693.
Yokoyama et al. "A New Functional . . . (RHET)" Jap. J. of Appl. Phys. vol. 24, No. 11, Nov. 85, pp. 853-854.
Miller et al. "Parabolic System" Physical Review B vol. 29 No. 6. Mar. 15, 1984 pp. 3740-3743.
Woodland Practical Electronics London McGraw-Hill.

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