Resonant tunneling diode structures for funtionally complete low

Details Resonant tunneling diode structures for funtionally complete low Resonant tunneling diode structures for funtionally complete low

1997-06-05

1998-09-29

Santamauro, Jon

Electronic digital logic circuitry

Function of and, or, nand, nor, or not

Diode

326 93, 326 17, 327200, 327499, H03K 1910, H03K 1901

Patent

active

058150080

ABSTRACT:
Negative-resistance resonant tunnel diodes (RTDs) perform a complete set of logic functions with a single basic configuration. Inputs feed through Schottky diodes to a transfer RTD coupled to a clocked latch having two RTDs in series. Cascaded gates are driven synchronously by multiple clock phases or by asynchronous event signals. An XOR configuration also provides logical inversion.

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Chow, W.F., Principles of Tunnel Diode Circuits, John Wiley & Sons, Inc., pp. 183-348 (1964).
Cooperman, M., "Gigahertz Tunnel-Diode Logic", RCA Review, 424-457, (Sep. 1967).
Davidovich, M.A., et al., "Resonant Interband Tunneling", NATO ASI Series, Series B: Physics vol. 277, Plenum Press, New York, 61-63, (1991).
Liu, H.C., et al., "High-Frequency Resonant-Tunneling Devices", Semiconductors and Semimetals, 41, 404-411, (1994).
Sollner, T.L., et al., "Resonant-Tunnelling-Diode Circuits", Int. Semicond. Dev. Res. Symp., Charlottsville, VA., 307-310, (Dec. 1-3, 1993).
Wei, S.J., et al., "A Self-Latching A/D Converter Using Resonant Tunneling Diodes", IEEE J. Solid State Circuits, 28, No. 6, 697-700, (Jun. 1993).

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