Static information storage and retrieval – Systems using particular element – Negative resistance
Patent
1993-12-14
1995-02-14
Fears, Terrell W.
Static information storage and retrieval
Systems using particular element
Negative resistance
365175, G11C 1300
Patent
active
053901452
ABSTRACT:
A semiconductor memory device including a plurality of bit lines and a plurality of word lines which intersect to form a matrix of cross points. A respective memory cell is disposed at each cross point and corresponds to the respective word line and respective bit line intersecting at the respective cross point. Each memory cell includes a transfer gate having a first current terminal connected to the corresponding bit line and a control terminal connected to the corresponding word line. Each memory cell also includes a pair of serially connected negative differential resistance memory elements having an interconnection node therebetween. The interconnection node is connected to the second current terminal of the transfer gate. A characteristic controlling circuit is coupled to the plurality of bit lines and controls the voltage of each bit line based on whether a respective memory cell corresponding to the respective bit line is selected or not selected, the characteristic controlling circuit including a plurality of negative differential resistance elements respectively corresponding to the plurality of bit lines.
Nakasha Yasuhiro
Watanabe Yuu
Fears Terrell W.
Fujitsu Limited
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