Resolution in optical lithography

Details Resolution in optical lithography Resolution in optical lithography

1982-02-26

1983-11-08

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430330, 430321, 430324, G03C 500

Patent

active

044143141

ABSTRACT:
Improved resolution in optical lithography, as used in the very large scale integration of electronic circuits, is obtained by employing a thin film of 4-phenylazo-1-naphthylamine between silicon substrate and overlying layer of light sensitive photoresist. The 4-phenylazo-1-naphthylamine acts as a stable, highly light absorbent medium exhibiting chemical and physical compatibility with the silicon substrate and photoresists with ether-type solvent systems.

REFERENCES:
patent: 4023185 (1977-05-01), Bloom et al.
patent: 4328298 (1982-05-01), Nester
patent: 4348471 (1982-09-01), Shelnut et al.

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