Resistor with low thermal activation energy

Details Resistor with low thermal activation energy Resistor with low thermal activation energy

1985-11-12

1987-07-07

Larkins, William D.

Static information storage and retrieval

Systems using particular element

Flip-flop

357 51, 357 59, H01L 2704, G11C 1140

Patent

active

046791701

ABSTRACT:
An improved process in making a polysilicon resistor suitable for use as a load resistor in a static memory wherein after the doping of the polysilicon, the device is annealed by exposing it to a rapid increase of ambient temperature (up to between 900 and 1200.degree. C.), maintaining the high ambient temperature for a controlled time (about 5 seconds) and then lowering the ambient tempertature at a rapid rate. This decreases resistances by one order of magnitude and significantly decreases the temperature activation energy of the resistor. This permits static memory cells to retain data even though the cell has high leakage currents, thereby improving final test yields.

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