Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-10
2008-12-16
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S356000, C257S362000, C257S363000, C257SE27035
Reexamination Certificate
active
07465995
ABSTRACT:
A semiconductor device includes an ESD protection device on a substrate, and a resistor having a gate structure overlying a resistor well separating a first doped region coupled to the ESD protection device and a second doped region coupled to a supply voltage for passing an ESD current from the second doped region to the first doped region to turn on the ESD protection device for dissipating the ESD current during an ESD event. The resistor well has an impurity density lower than that of the first and second doped regions for increasing resistance therebetween.
REFERENCES:
patent: 6096609 (2000-08-01), Kim et al.
patent: 6137664 (2000-10-01), Casper et al.
patent: 6531745 (2003-03-01), Woolery et al.
patent: 7012305 (2006-03-01), Su et al.
patent: 2004/0256681 (2004-12-01), Irino
Chu Yu-Hung
Huang Shao-Chuang
K & L Gates LLP
Taiwan Semiconductor Manufacturing Co.
Taylor Earl N
Vu David
LandOfFree
Resistor structure for ESD protection circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resistor structure for ESD protection circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistor structure for ESD protection circuits will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4037265