Resistor structure for ESD protection circuits

Details Resistor structure for ESD protection circuits Resistor structure for ESD protection circuits

2006-01-10

2008-12-16

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S355000, C257S356000, C257S362000, C257S363000, C257SE27035

Reexamination Certificate

active

07465995

ABSTRACT:
A semiconductor device includes an ESD protection device on a substrate, and a resistor having a gate structure overlying a resistor well separating a first doped region coupled to the ESD protection device and a second doped region coupled to a supply voltage for passing an ESD current from the second doped region to the first doped region to turn on the ESD protection device for dissipating the ESD current during an ESD event. The resistor well has an impurity density lower than that of the first and second doped regions for increasing resistance therebetween.

REFERENCES:
patent: 6096609 (2000-08-01), Kim et al.
patent: 6137664 (2000-10-01), Casper et al.
patent: 6531745 (2003-03-01), Woolery et al.
patent: 7012305 (2006-03-01), Su et al.
patent: 2004/0256681 (2004-12-01), Irino

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