Resistor-capacitor-transistor type integrated circuit, method fo

Details Resistor-capacitor-transistor type integrated circuit, method fo Resistor-capacitor-transistor type integrated circuit, method fo

1994-05-19

1995-07-04

Grimm, Siegfried H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257380, 257533, 331111, H01L 2704, H03K 3354

Patent

active

054303192

ABSTRACT:
A resistor-capacitor-transistor type of integrated circuit comprises mainly a non-self-aligned N diffusion bar 1 covered with a polysilicon plate, and a drain type N diffusion, self-aligned by the polysilicon plate. The resulting structure is a distributed resistor-capacitor-transistor quadripole whose main characteristics are that it is very compact and that the time taken by the capacitor to get discharged through the transistor is independent of the dimensions of the structure.

REFERENCES:
patent: 3471755 (1969-10-01), Bilotti
patent: 4285001 (1981-08-01), Gerzberg et al.

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