Resistive sense memory array with partial block update...

Details Resistive sense memory array with partial block update... Resistive sense memory array with partial block update...

2008-11-12

2010-11-09

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000, C365S230030, C365S235000, C365S189040, C365S230010

Reexamination Certificate

active

07830700

ABSTRACT:
Various embodiments of the present invention are generally directed to a method and apparatus for carrying out a partial block update operation upon a resistive sense memory (RSM) array, such as formed from STRAM or RRAM cells. The RSM array is arranged into multi-cell blocks (sectors), each block having a physical block address (PBA). A first set of user data is written to a selected block at a first PBA. A partial block update operation is performed by writing a second set of user data to a second block at a second PBA, the second set of user data updating a portion of the first set of user data in the first PBA. The first and second blocks are thereafter read to retrieve the second set of user data and a remaining portion of the first set of user data.

REFERENCES:
patent: 6567307 (2003-05-01), Estakhri
patent: 6763424 (2004-07-01), Conley
patent: 6968421 (2005-11-01), Conley
patent: 7395404 (2008-07-01), Gorobets et al.
patent: 7412560 (2008-08-01), Smith et al.

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