Resistive random access memory device

Details Resistive random access memory device Resistive random access memory device

2008-01-04

2011-10-11

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE45003, C365S148000

Reexamination Certificate

active

08035095

ABSTRACT:
Provided is a resistive random access memory device that includes a storage node connected to a switching device. The resistive random access memory device includes a first electrode, a resistance variable layer, and a second electrode which are sequentially stacked, wherein a diffusion blocking layer is formed between the first electrode and the resistance variable layer or between the resistance variable layer or/and the second electrode.

REFERENCES:
patent: 2005/0156256 (2005-07-01), Kim et al.
patent: 2005/0194622 (2005-09-01), Lee et al.
patent: 2006/0054950 (2006-03-01), Baek et al.
patent: 2007/0108431 (2007-05-01), Chen et al.
patent: 2007/0274121 (2007-11-01), Lung et al.
patent: 2009/0102598 (2009-04-01), Yamazaki et al.

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