Resistive random access memory device

Details Resistive random access memory device Resistive random access memory device

2011-07-26

2011-07-26

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S467000, C257SE31029, C365S148000

Reexamination Certificate

active

07985961

ABSTRACT:
Example embodiments may provide resistive random access memory devices and/or methods of manufacturing resistive random access memory devices. Example embodiment resistive random access memory devices may include a switching device and/or a storage node connected to the switching device. The storage node may include a stack structure including a plurality of resistance change layers separated from one another and first and second electrodes each on a side wall of the stack structure. The resistance change layers may be connected to the first and the second electrodes in parallel and/or may have different switching voltages from each other.

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