Resistive organic memory device and fabrication method thereof

Details Resistive organic memory device and fabrication method thereof Resistive organic memory device and fabrication method thereof

2011-08-30

2011-08-30

Such, Matthew W (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C365S129000, C365S148000, C257SE51008, C257SE51044

Reexamination Certificate

active

08008653

ABSTRACT:
Disclosed herein are an organic memory device and a method for fabricating the memory device. The organic memory device may include a first electrode, a second electrode and an organic active layer between first and second electrodes, wherein the organic active layer is formed of a mixture of a conductive polymer and a metallocene compound. Because the organic memory device possesses decreased switching time, decreased operating voltage, decreased fabrication costs and increased reliability, the organic memory device may be used as a highly integrated large-capacity memory device.

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