Resistive nonvolatile memory element, and production method...

Details Resistive nonvolatile memory element, and production method... Resistive nonvolatile memory element, and production method...

2009-09-02

2010-06-15

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C257S037000, C257S043000, C257SE21006, C257SE29325, C365S100000, C438S385000, C977S773000, C977S810000, C977S943000

Reexamination Certificate

active

07738280

ABSTRACT:
An object of the present invention is to provide a resistive nonvolatile memory element having an electric current path which can be realized by a simple and convenient process, and capable of allowing for micro-fabrication.The resistive nonvolatile memory element of the present invention includes first electrode203, oxide semiconductor layer204awhich is formed on the first electrode203and the resistance of which is altered depending on the applied voltage, metal nanoparticles204bhaving a diameter of between 2 nm and 10 nm arranged on the oxide semiconductor layer204a, tunnel barrier layer204cformed on the oxide semiconductor layer204aand on the metal nanoparticles204b, and second electrode206formed on the tunnel barrier layer204c, in which the metal nanoparticles204bare in contact with the oxide semiconductor layer204a.

REFERENCES:
patent: 2004/0183647 (2004-09-01), Arai et al.
patent: 2005/0167699 (2005-08-01), Sugita et al.
patent: 2006/0154432 (2006-07-01), Arai et al.
patent: 2006/0160304 (2006-07-01), Hsu et al.
patent: 2006/0231889 (2006-10-01), Chen et al.
patent: 2007/0090444 (2007-04-01), Park et al.
patent: 2007/0167008 (2007-07-01), Hsu et al.
patent: 2004-111734 (2004-04-01), None
patent: 2004-281497 (2004-10-01), None
patent: 2006-196601 (2006-07-01), None
patent: 2006-203178 (2006-08-01), None
patent: 2006-210639 (2006-08-01), None
patent: 2006-269905 (2006-10-01), None
patent: 2007-116166 (2007-05-01), None
patent: 2007-180174 (2007-07-01), None
patent: 2007-180473 (2007-07-01), None
patent: 2007-288008 (2007-11-01), None
patent: 2008-021750 (2008-01-01), None
patent: WO 2004/027877 (2004-04-01), None
patent: WO 2005/041303 (2005-05-01), None
patent: WO 2006/104150 (2006-03-01), None
Y. Ogimoto., et al., “Resistance switching memory device with a nanoscale confined current path”, Applied Physics Letters, 2007, vol. 90, American Institute Physics.

Affiliated with

Also associated with

Rating

Resistive nonvolatile memory element, and production method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resistive nonvolatile memory element, and production method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistive nonvolatile memory element, and production method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4215251