Resistive memory including bipolar transistor access devices

Details Resistive memory including bipolar transistor access devices Resistive memory including bipolar transistor access devices

2006-11-21

2008-10-14

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000

Reexamination Certificate

active

07436695

ABSTRACT:
A memory includes a first bipolar transistor, a first bit line, and a first resistive memory element coupled between a collector of the first bipolar transistor and the first bit line. The memory includes a second bit line, a second resistive memory element coupled between an emitter of the first bipolar transistor and the second bit line, and a word line coupled to a base of the first bipolar transistor.

REFERENCES:
patent: 7050328 (2006-05-01), Khouri et al.
patent: 2005/0099211 (2005-05-01), Dahlin
patent: 2005/0105329 (2005-05-01), Nazarian
patent: 2006/0131693 (2006-06-01), Kim
patent: 2006/0145135 (2006-07-01), Huang et al.
“Multi-layer Cross-Point Binary Oxide Resistive Memory (OxRRAM) for Post-NAND Storage Application”. I. G. Baek, et al. Samsung Advanced Institute of Technology. 2005. (4 pgs.).

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