Resistive memory having shunted memory cells

Details Resistive memory having shunted memory cells Resistive memory having shunted memory cells

2006-10-02

2009-06-23

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S100000, C257S002000, C257S003000, C257S005000, C257S379000

Reexamination Certificate

active

07551476

ABSTRACT:
A memory includes a bit line and a plurality of resistive memory cells coupled to the bit line. Each resistive memory cell is programmable to each of at least three resistance states. The memory includes a first resistor for selectively coupling to the bit line to form a first current divider with a selected memory cell during a read operation.

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