Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2009-05-13
2010-12-28
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S100000, C365S158000
Reexamination Certificate
active
07859888
ABSTRACT:
A device having a resistive memory element, a control device, a digit line and a sensing circuit. The sensing circuit is configured to sense a voltage correlative to a resistance state of the resistive memory element. The sensing circuit if further configured to sense the voltage correlative to the resistance state after a waiting period that is less than or equal to the product of a capacitance of a digit line and a total resistance of the control device.
REFERENCES:
patent: 5278784 (1994-01-01), Ishihara et al.
patent: 6456524 (2002-09-01), Perner et al.
patent: 6809981 (2004-10-01), Baker
patent: 6822892 (2004-11-01), Baker
patent: 6847543 (2005-01-01), Toyoda et al.
patent: 6885580 (2005-04-01), Baker
patent: 6901020 (2005-05-01), Baker
patent: 6914838 (2005-07-01), Baker
patent: 6930942 (2005-08-01), Baker
patent: 6937509 (2005-08-01), Perner et al.
patent: 6954392 (2005-10-01), Baker
patent: 6967865 (2005-11-01), Lee
patent: 6985375 (2006-01-01), Baker
patent: 7009901 (2006-03-01), Baker
patent: 7031185 (2006-04-01), Perner et al.
patent: 7106612 (2006-09-01), Kim
patent: 7123530 (2006-10-01), Voshell
patent: 7184297 (2007-02-01), Yasuda et al.
patent: 7209379 (2007-04-01), Mori et al.
patent: 7242606 (2007-07-01), Hachino et al.
patent: 7397689 (2008-07-01), Liu et al.
patent: 7505305 (2009-03-01), Hidaka
patent: 2003/0058686 (2003-03-01), Ooishi et al.
patent: 2006/0002186 (2006-01-01), Frey
patent: 2006/0083040 (2006-04-01), Pham et al.
patent: 2006/0120148 (2006-06-01), Kim et al.
patent: 2006/0221663 (2006-10-01), Roehr
patent: 2007/0097740 (2007-05-01), Derhacobian et al.
patent: 2007/0268742 (2007-11-01), Liu
patent: 2007/0279967 (2007-12-01), Luo et al.
patent: 2009/0237977 (2009-09-01), Ramani et al.
Y. Watanabe, et al.; “Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals”; Applied Physics Letters, vol. 78, No. 23, Jun. 4, 2001, pp. 3738-3740.
C. Rossel, et al.; “Electrical current distribution across a metal-insulator-metal structure during bistable switching”; Journal of Applied Physics, vol. 90, No. 6, Sep. 15, 2001, pp. 2892-2898.
S.T. Hsu, et al.; “RRAM Switching Mechanism”; (undated).
Hush Glen
Ingram Mark
Liu Jun
Violette Mike
Fletcher Yoder
Micro)n Technology, Inc.
Nguyen Tan T.
LandOfFree
Resistive memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resistive memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistive memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4163906