Resistive memory cells and devices having asymmetrical contacts

Details Resistive memory cells and devices having asymmetrical contacts Resistive memory cells and devices having asymmetrical contacts

2006-03-17

2009-12-29

Le, Vu A (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S161000, C365S163000, C365S171000, C365S173000

Reexamination Certificate

active

07639521

ABSTRACT:
A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

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Notice to File a Response/Amendment to the Examination Report, Korean Application No. 10-2005-0025561, Aug. 22, 2006.

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