Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2008-03-25
2008-03-25
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C365S100000, C365S148000, C257S537000, C257SE27006, C257SE27016, C257SE27025, C257SE27035, C257SE27047, C257SE27071, C257SE27101, C257SE21007, C257SE21294, C257SE21496, C438S238000, C438S384000, C438S508000, C438S508000
Reexamination Certificate
active
11279640
ABSTRACT:
A resistive memory cell employs a photoimageable switchable material, which is patternable by actinic irradiation and is reversibly switchable between distinguishable resistance states, as a memory element. Thus, the photoimageable switchable material is directly patterned by the actinic irradiation so that it is possible to fabricate the resistive memory cell through simple processes, and avoiding ashing and stripping steps.
REFERENCES:
patent: 4392209 (1983-07-01), DeBar
patent: 5272359 (1993-12-01), Nagasubramanian et al.
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6834008 (2004-12-01), Rinerson et al.
patent: 7211856 (2007-05-01), Sezi et al.
patent: 2003/0076649 (2003-04-01), Speakman
patent: 2005/0111252 (2005-05-01), Bednorz et al.
patent: 2005/0111256 (2005-05-01), Bednorz et al.
patent: 2005/0146955 (2005-07-01), Kajiyama
patent: 2005/0179033 (2005-08-01), Walter et al.
patent: 2005/0180189 (2005-08-01), Happ et al.
patent: 2005/0186737 (2005-08-01), Sezi et al.
patent: 2005/0212022 (2005-09-01), Greer et al.
patent: 2005/0287698 (2005-12-01), Li et al.
patent: 2006/0046344 (2006-03-01), Liljedahl et al.
patent: 2006/0175604 (2006-08-01), Ufert
patent: 2006/0181317 (2006-08-01), Joo et al.
patent: 2006/0234418 (2006-10-01), Ufert
patent: 2007/0029546 (2007-02-01), Cho et al.
patent: 2007/0176629 (2007-08-01), Lee et al.
patent: 2007/0194288 (2007-08-01), Lee et al.
patent: 2007/0197768 (2007-08-01), Choi et al.
patent: 2003-068983 (2003-03-01), None
patent: 2004-128486 (2004-04-01), None
patent: 1998-051020 (1998-09-01), None
patent: 2001-0034466 (2001-04-01), None
Ouyang, Jianyong, et al, “Programmable Polymer Thin Film and Non-Volatilve Memory Device”, Nature Materials: vol. 3, Dec. 2004, pp. 918-922.
English language abstract of Japanese Publication No. 2003-068983.
English language abstract of Japanese Publication No. 2004-128486.
Cho Byeong-Ok
Lee Moon-Sook
Yasue Takahiro
Fourson George
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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