Resistive memory cell array with common plate

Details Resistive memory cell array with common plate Resistive memory cell array with common plate

2006-04-27

2009-02-24

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

Reexamination Certificate

active

07495951

ABSTRACT:
In the present method of changing the state of a resistive memory device which is capable of adopting an erased, relatively higher resistance state and a programmed, relatively lower resistance state, the resistive memory device having first and second electrodes and an active layer between the first and second electrodes, an electrical potential is applied across the electrodes and current through the resistive memory device is limited by means of a first current limiting structure to change the resistive memory device from the erased, higher resistance state to the programmed, lower resistance state. Furthermore, an electrical potential is applied across the electrodes and current through the resistive memory device is limited by means of a second current limiting structure to change the resistive memory device from the programmed, lower resistance state to the erased, higher resistance state.

REFERENCES:
patent: 6859382 (2005-02-01), Rinerson et al.
patent: 2004/0160817 (2004-08-01), Rinerson et al.

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