Resistive memory array using P-I-N diode select device and...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant

Reexamination Certificate

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C438S328000, C257S656000, C257SE29336, C257SE21135

Reexamination Certificate

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07989328

ABSTRACT:
An electronic structure includes a resistive memory device, and a P-I-N diode in operative association with the resistive memory device. A plurality of such electronic structures are used in a resistive memory array, with the P-I-N diodes functioning as select devices in the array. Methods are provided for fabricating such resistive memory device-P-I-N diode structures.

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patent: 2007/0222015 (2007-09-01), Cheng et al.
patent: 2008/0019257 (2008-01-01), Philipp et al.

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