Resistive memory arrangement

Details Resistive memory arrangement Resistive memory arrangement

2007-05-08

2007-05-08

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000

Reexamination Certificate

active

11215443

ABSTRACT:
Provided is a resistive memory arrangement having a cell array structured in rows and columns and having resistive memory cells connected to a drive element for driving. Each drive element is jointly connected to n cell resistors forming a memory cell, the cell resistors being CBRAM resistance elements, in particular, and also to a writing, reading and erasing method for a resistive memory arrangement realized with CBRAM resistance elements.

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