Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-16
2011-11-22
Fourson, III, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21645, C438S153000, C438S154000, C438S188000, C438S202000, C438S203000
Reexamination Certificate
active
08063448
ABSTRACT:
A memory device includes a multi gate field effect transistor (MuGFET) having a fin with a contact area. A programmable memory element abuts the fin contact area.
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patent: 2002/0126524 (2002-09-01), Sugibayashi et al.
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Kund Michael
Pacha Christian
Schönauer Tim
Eschweiler & Associates LLC
Fourson, III George
Infineon - Technologies AG
Parker John M
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