Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2010-11-15
2011-10-11
Dinh, Son (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S100000, C365S207000
Reexamination Certificate
active
08036019
ABSTRACT:
The present disclosure includes resistive memory devices and systems having resistive memory cells, as well as methods for operating the resistive memory cells. One memory device embodiment includes at least one resistive memory element, a programming circuit, and a sensing circuit. For example, the programming circuit can include a switch configured to select one of N programming currents for programming the at least one resistive memory element, where each of the N programming currents has a unique combination of current direction and magnitude, with N corresponding to the number of resistance states of the at least one memory element. In one or more embodiments, the sensing circuit can be arranged for sensing of the N resistance states.
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Liu Jun
Ma Yantao
Brooks Cameron & Huebsch PLLC
Dinh Son
Micron Technology Inc
Nguyen Nam
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