Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2009-08-05
2011-10-11
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S158000
Reexamination Certificate
active
08036015
ABSTRACT:
A resistive memory includes a plurality of memory cells, a plurality of reference cells having mutually different resistance values, at least one sense amplifier having a first input terminal connected to one selected memory cell which is selected from the plurality of memory cells at a time of read, and a second input terminal connected to one selected reference cell which is selected from the plurality of reference cells at the time of read, and one latch circuit which holds offset information of the at least one sense amplifier. The resistive memory further includes a decoder which selects, in accordance with the offset information, the one selected reference cell from the plurality of reference cells, and connects the one selected reference cell to the second input terminal of the at least one sense amplifier.
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Background Art Information.
U.S. Appl. No. 12/543,793, filed Oct. 26, 2004, Ooishi.
Itagaki Kiyotaro
Tsuchida Kenji
Ueda Yoshihiro
Kabushiki Kaisha Toshiba
Knobbe Martens Olson & Bear LLP
Phung Anh
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