Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1981-02-25
1986-01-21
Fears, Terrell W.
Static information storage and retrieval
Systems using particular element
Semiconductive
365174, 365184, G11C 1140
Patent
active
RE0320714
ABSTRACT:
An improved bistable FET circuit is disclosed which employs a reduced number of device elements and occupies less space in an integrated circuit. The flip-flop circuit includes the FET device having its source connected to a first potential and a second FET device having its source also connected to the first potential. The first FET device has a gate electrode composed of a resistive material with the first side connected to the drain of the second FET device and the second side connected to a second potential. The second FET device has a gate electrode comprised of a resistive material with the first side connected to the drain of the first FET device and a second side connected to the second potential. In this manner, the resistive gate of the first device serves as the load for the second device and the resistive gate of the second device serves as the load for the first device. Application of this circuit to electrically programmable PLA's and to random access memories is disclosed.
REFERENCES:
patent: 3714522 (1973-01-01), Komiya et al.
patent: 3943286 (1976-03-01), Tsurushima
patent: 4025940 (1977-05-01), Kimura et al.
patent: 4092735 (1978-05-01), McElroy
patent: 4157557 (1979-06-01), Sato et al.
IEEE Transactions on Electron Devices "A Resistive-Gated IGFET Tetrode" by C. Hu et al., Jul. 1971, pp. 418-425.
Fears Terrell W.
Hoel John E.
International Business Machines - Corporation
LandOfFree
Resistive gate FET flip-flop storage cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resistive gate FET flip-flop storage cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistive gate FET flip-flop storage cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2292548