Resistive gate FET flip-flop storage cell

Details Resistive gate FET flip-flop storage cell Resistive gate FET flip-flop storage cell

1977-12-20

1979-06-12

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365174, 365184, 307238, G11C 1140

Patent

active

041582390

ABSTRACT:
An improved bistable FET circuit is disclosed which employs a reduced number of device elements and occupies less space in an integrated circuit. The flip-flop circuit includes the FET device having its source connected to a first potential and a second FET device having its source also connected to the first potential. The first FET device has a gate electrode composed of a resistive material with the first side connected to the drain of the second FET device and the second side connected to a second potential. The second FET device has a gate electrode comprised of a resistive material with the first side connected to the drain of the first FET device and a second side connected to the second potential. In this manner, the resistive gate of the first device serves as the load for the second device and the resistive gate of the second device serves as the load for the first device. Application of this circuit to electrically programmable PLA's and to random access memories is disclosed.

REFERENCES:
patent: 4092735 (1978-05-01), McElroy

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