Resistive circuit for a thin film transistor liquid crystal disp

Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal

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349187, 349139, G02F 11333

Patent

active

058284281

ABSTRACT:
A TFT-LCD resistive circuit provides adequate resistance through a resistive layer formed of N.sup.+ amorphous silicon and silicide. A first metal layer having a shorting bar and a first is formed over the resistive layer. A passivation layer is formed over the first metal layer and patterned to expose a portion of the first metal layer over the resistive layer. A second pad is formed on the passivation layer in connecting with the first pad. The exposed portion of the first metal layer over the resistive layer is etched down to the resistive layer, using the passivation layer as a mask. Accordingly, a conventional photoresist process is not required to form the resistive circuit. The size of the resistive area is reduced while still providing adequate resistance by virtue of the N.sup.+ amorphorus silicon and silicide.

REFERENCES:
patent: 4789857 (1988-12-01), Maurice
patent: 5019001 (1991-05-01), Abe et al.
patent: 5068748 (1991-11-01), Ukai et al.
patent: 5187604 (1993-02-01), Taniguchi et al.
patent: 5650834 (1997-07-01), Nakagawa et al.

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