Resistance variable ‘on ’ memory

Details Resistance variable ‘on ’ memory Resistance variable ‘on ’ memory

2005-05-10

2005-05-10

Nguyen, Viet Q. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S113000, C365S114000, C365S100000, C257S002000

Reexamination Certificate

active

06891749

ABSTRACT:
A resistance variable memory element and method for stabilizing the resistance variable memory element by providing a first and second electrode connected to a resistance variable material whereby the first and second electrodes comprise materials capable of providing a differential electrochemical potential across the resistance variable memory element which causes the resistance variable memory element to write to a predetermined “on” state. The resistance variable memory element is stabilized in a low resistance “on” state by the differential electrochemical potential. The first electrode preferably is a platinum electrode and the second electrode is preferably a silver electrode. The method and circuitry further includes a reverse refresh for stabilizing the resistance variable memory element in a high resistance state by applying a reverse voltage to the memory element.

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